New ZEISS Crossbeam 750 FIB-SEM for high-accuracy sample preparation workflows

ZEISS Crossbeam 750 FIB-SEM advances live, high-resolution "see while you mill" capability, providing unmatched feedback for precision endpointing in sample preparation workflows. GNW

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Advances in simultaneous SEM imaging while FIB milling provide unmatched feedback for precision endpointing

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ZEISS today unveiled the new ZEISS Crossbeam 750 focused ion beam-scanning electron microscope (FIB-SEM) that is optimized for demanding sample preparation. It provides a live, high-resolution “see while you mill” view at any imaging and milling condition to enable immediate feedback and eliminate milling interruptions for uniform first-pass transmission electron microscopy (TEM) lamellae and precise FIB cross sections.

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For advanced semiconductor and materials workflows, ZEISS Crossbeam 750 FIB-SEM with new Gemini 4 electron optics delivers background-free, real-time endpointing and sub-nanometer precision for TEM lamellae and high-fidelity three-dimensional (3D) analysis. It is ideal for analysis of leading-node logic and memory devices as well as nanofabrication and 3D volume imaging. For materials research and life sciences, ZEISS Crossbeam 750 speeds acquisition times for 3D tomography through a larger field of view with reduced distortion.

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“ZEISS Crossbeam 750 was designed around one core principle: Our customers should not have to stop milling to see where in their sample they are working,” said Dr. Thomas Rodgers, Senior Director of Market Strategy, Head of Business Sector Electronics, ZEISS Microscopy. “Our new high-dynamic-range (HDR) Mill + SEM capability maintains a clear, high-resolution SEM view at any FIB condition, from rapid milling with high FIB currents down to fine polishing at 0.5 kV. This real-time clarity, paired with Gemini 4 electron optics, allows customers to fine-tune processes as they work—reducing rework, improving yield and delivering highly uniform lamellae on the first pass.”

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“See while you mill” transforms advanced semiconductor analysis

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As semiconductor device architectures shrink and complexity increases—from fin field-effect transistor (finFET) to gate-all-around (GAA), complementary field-effect transistor (CFET), and emerging two-dimensional (2D) materials—precise, real-time control during FIB processing has become critical. ZEISS Crossbeam 750 directly addresses this need by maintaining a clear, high-resolution SEM view during milling, even at low landing energies and at tilt.

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The system enables users to observe FIB-sample interactions in real time, fine-tune thinning and polishing steps as they occur, and to hit nanometer-scale endpoints on the first attempt—achieving consistent lamella quality for leading-node logic and memory device and backside power delivery network workflows.

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Imaging excellence drives scientific discovery

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ZEISS Crossbeam 750 FIB-SEM is essential in materials science workflows for uniform TEM lamella preparation, atom probe tomography (APT) sample prep, nanofabrication (including electron-beam lithography), and high-fidelity 3D volume imaging. For life sciences and materials research, the undistorted large field-of-view of ZEISS Crossbeam 750 and stable low-kV performance improves signal-to-noise and speeds acquisition time.